The valley Hall effect in MoS2 transistors
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چکیده
منابع مشابه
Mak transistors 2 The valley Hall effect in MoS
, 1489 (2014); 344 Science et al. K. F. Mak transistors 2 The valley Hall effect in MoS This copy is for your personal, non-commercial use only. clicking here. colleagues, clients, or customers by , you can order high-quality copies for your If you wish to distribute this article to others here. following the guidelines can be obtained by Permission to republish or repurpose articles or portio...
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Rui-Lin Chu,1 Xiao Li,2 Sanfeng Wu,3 Qian Niu,2 Wang Yao,4 Xiaodong Xu,3,5 and Chuanwei Zhang1,* 1Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, USA 2Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA 3Department of Physics, University of Washington, Seattle, Washington 98195, USA 4Department of Physics and Center of Theoretica...
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The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions of time constants. These defects degrade the mobility and additionally lead to the hysteresis of the gate transfer characteristics, which presents a crucial performance and reliability issue for these new technologies. Here we perform a detailed study of the hysteresis in dou...
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ژورنال
عنوان ژورنال: Science
سال: 2014
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.1250140